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It's Time For A New CPU.

Techquickie@techquickie330.6K viewsApr 6, 20214:34
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YT
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Promos

Thanks to Wren for sponsoring this video! Offset your carbon footprint with Wren at wren.co Learn about the new gate-all-around transistors coming to CPUs. Leave a reply with your requests for future episodes, or tweet them here: twitter.com ►GET MERCH: lttstore.com ►SUPPORT US ON FLOATPLANE: floatplane.com ►LTX EXPO: ltxexpo.com AFFILIATES & REFERRALS --------------------------------------------------- ►Affiliates, Sponsors & Referrals: lmg.gg ►Private Internet Access VPN: lmg.gg ►MK Keyboards: lmg.gg ►Nerd or Die Stream Overlays: lmg.gg ►NEEDforSEAT Gaming Chairs: lmg.gg ►Displate Metal Prints: lmg.gg ►Epic Games Store (LINUSMEDIAGROUP): lmg.gg ►Official Game Store: nexus.gg ►Amazon Prime: lmg.gg ►Audible Free Trial: lmg.gg ►Our Gear on Amazon: geni.us FOLLOW US ELSEWHERE --------------------------------------------------- Twitter: twitter.com Facebook: @LinusTech Instagram: @linustech Twitch: twitch.tv FOLLOW OUR OTHER CHANNELS --------------------------------------------------- Linus Tech Tips: lmg.gg TechLinked: lmg.gg ShortCircuit: lmg.gg LMG Clips: lmg.gg Channel Super Fun: lmg.gg Carpool Critics: lmg.gg

Start
AI OverviewDefault language

The video explains why the traditional path of shrinking transistor sizes, which has driven CPU performance for decades, is approaching physical limits and how a new transistor concept called Gate-all-around (GAA) could sustain performance gains. It begins by recounting the historical move from roughly 250 nanometer processes to today’s sub-7 nanometer nodes and the rise of FinFET transistors, which raised the channel above the substrate like a shark fin to increase current flow. The presenter then introduces Gate-all-around as the next evolution, where the channel is still raised but is broken into multiple nanoribbons, allowing the gate to surround the channel on all sides. This design improves current control, reduces leakage as transistors shrink, and enables stacking nanoribbons to save space, addressing the bottlenecks of conventional FinFETs. A key practical insight is that GAA does not require exotic materials; silicon germanium alloys can be used to realize these structures, making bulk production feasible for large chip makers. The video also emphasizes that Gate-all-around is expected to reach the market within about five years, initially in data centers and servers before consumer devices, delivering benefits like faster compute, better battery life, and lower power consumption. The segment concludes by noting the potential impact on laptops and smartphones, and hints at how gaming could improve as GPUs and related architectures adopt nanoribbon-based transistors. The sponsor segment briefly highlights Wren, a carbon footprint offset platform, tying the tech-forward discussion to environmental responsibility and inviting viewers to participate in offset programs. Overall, the episode frames Gate-all-around as a practical, scalable upgrade path for future CPUs that could extend Moore’s Law by enabling denser, more controllable transistors without requiring radically new materials.

Topics · technology · science · computing · semiconductors

Questions answered

What is Gate-all-around transistors and how do they differ from FinFETs?
Gate-all-around transistors surround the nanoribbon channel on all sides with the gate, improving current control and reducing leakage compared to FinFETs, and they allow stacking of nanoribbons for higher density.
When are Gate-all-around transistors expected to reach consumer devices?
They are expected to arrive within about five years across vendors, starting in data center and server applications before appearing in consumer devices.